IRF2807PBF HEXFET® Power MOSFET International Rectifier

Infineon
Infineon
IRF2807PBF
Part Number: IRF2807PBF Manufacturer: Infineon Technologies Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 230 W Maximum Drain-Source Voltage |Vds|: 75 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 82 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 160 nC Rise Time (tr): 64 nS Drain-Source Capacitance (Cd): 610 pF Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm Package: TO-220AB
Infineon
IRF2807PBF

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€0.60
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Part Number: IRF2807PBF Manufacturer: Infineon Technologies Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 230 W Maximum Drain-Source Voltage |Vds|: 75 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 82 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 160 nC Rise Time (tr): 64 nS Drain-Source Capacitance (Cd): 610 pF Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm Package: TO-220AB

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