IRF2807PBF HEXFET® Power MOSFET International Rectifier

Infineon
Infineon
IRF2807PBF
Part Number: IRF2807PBF Manufacturer: Infineon Technologies Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 230 W Maximum Drain-Source Voltage |Vds|: 75 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 82 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 160 nC Rise Time (tr): 64 nS Drain-Source Capacitance (Cd): 610 pF Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm Package: TO-220AB
Infineon
IRF2807PBF

Riferimenti Specifici

500 Disponibile Maggiori info...

0,60 €
Prezzo 1+
Per le consegne fuori dall'Italia l'ordine minimo è di 50,00 € netti
Part Number: IRF2807PBF Manufacturer: Infineon Technologies Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 230 W Maximum Drain-Source Voltage |Vds|: 75 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 82 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 160 nC Rise Time (tr): 64 nS Drain-Source Capacitance (Cd): 610 pF Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm Package: TO-220AB
Conforme alla direttiva RoHS
 

Spedizione rapida e sicura

 

14 gg per esercitare il Diritto di Recesso

Prodotti correlati (Ci sono 3 altri prodotti nella stessa categoria)